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Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Identifieur interne : 003D12 ( Main/Repository ); précédent : 003D11; suivant : 003D13

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Auteurs : RBID : Pascal:10-0292476

Descripteurs français

Pascal (Inist)
- Microstructure, Epitaxie jet moléculaire, Couche tampon, Microscopie électronique transmission, Accommodation réseau, Densité dislocation, Mouvement dislocation, Dislocation filetée, Relaxation contrainte, Interaction dislocation, Annihilation dislocation, Mesure déformation, Nitrure d'indium, Silicium, Nitrure de gallium, Nitrure d'aluminium, InN.

English descriptors

KwdEn :
- Aluminium nitride, Buffer layer, Dislocation annihilation, Dislocation density, Dislocation interactions, Dislocation motion, Gallium nitride, Indium nitride, Microstructure, Mismatch lattice, Molecular beam epitaxy, Silicon, Strain measurement, Stress relaxation, Threading dislocation, Transmission electron microscopy.

Abstract

The structural properties of 2 μm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions occurred in the first ∼200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.

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<term>Dislocation density</term>
<term>Dislocation interactions</term>
<term>Dislocation motion</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Microstructure</term>
<term>Mismatch lattice</term>
<term>Molecular beam epitaxy</term>
<term>Silicon</term>
<term>Strain measurement</term>
<term>Stress relaxation</term>
<term>Threading dislocation</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term>
<term>Epitaxie jet moléculaire</term>
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<term>Accommodation réseau</term>
<term>Densité dislocation</term>
<term>Mouvement dislocation</term>
<term>Dislocation filetée</term>
<term>Relaxation contrainte</term>
<term>Interaction dislocation</term>
<term>Annihilation dislocation</term>
<term>Mesure déformation</term>
<term>Nitrure d'indium</term>
<term>Silicium</term>
<term>Nitrure de gallium</term>
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<front><div type="abstract" xml:lang="en">The structural properties of 2 μm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions occurred in the first ∼200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.</div>
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<fC01 i1="01" l="ENG"><s0>The structural properties of 2 μm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation of threading dislocations (TDs). Dislocation annihilation interactions occurred in the first ∼200 nm of the InN film and reduced the TD density. However, the density of screw and mixed type TDs was four times higher than edge type ones. This was attributed to the observed GaN/InN interfacial roughness, which was introduced by terminating TDs from the GaN/AlN buffer layer. Strain measurements showed that the InN film, as well as both buffer layers, was relaxed.</s0>
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<s5>06</s5>
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<s5>06</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s2>NC</s2>
<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
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<s5>17</s5>
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<s5>18</s5>
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<s5>18</s5>
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<fC03 i1="16" i2="X" l="SPA"><s0>Aluminio nitruro</s0>
<s5>18</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>52</s5>
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<fN21><s1>186</s1>
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</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) </s1>
<s3>Warsaw POL</s3>
<s4>2009-09-14</s4>
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Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

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